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MK8 Assembly Section Advanced Process Technology Cigarette Maker Transistor

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MK8 Assembly Section Advanced Process Technology Cigarette Maker Transistor

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Brand Name :	Upperbond
Model Number :	Maker
Certification :	CE, ISO
Price :	Negotiable
Payment Terms :	T/T, Western Union, MoneyGram, Paypal
Supply Ability :	10000 pcs/month
Delivery Time :	5-8 days

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MK8 Assembly Section Advanced Process Technology Cigarette Maker Transistor

MK8 Assembly Section Advanced Process Technology Cigarette Maker Transistor

A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.

1. Mechanism

A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.

1. IRFZ44NS/LPbF

	Parameter	Min.
V(BR)DSS	Drain-to-Source Breakdown Voltage	55
△V(BR)DSS 仏 Tj	Breakdown Voltage Temp. Coefficient	—
RDS(on)	Static Drain-to-Source On-Resistance	—
VGS(th)	Gate Threshold Voltage	2.0
gts	Forward Transconductance	19
bss	Drain-to-Source Leakage Current	—
bss	Drain-to-Source Leakage Current	—
loss	Gate-to-Source Forward Leakage	—
loss	Gate-to-Source Reverse Leakage	—
Qg	Total Gate Charge	—
Qgs	Gate-to-Source Charge	—
Qgd	Gate-to-Drain ("Miller") Charge	—

1. Absolute Maximum Ratings

	Parameter	Max.	Units
Id @ Tq = 25°C	Continuous Drain Current, Vgs @ 10V	49	A
lD @ Tc = 100°C	Continuous Drain Current, Vgs @ 10V	35
Idm	Pulsed Drain Current ①	160
PD @Ta = 25°C	Power Dissipation	3.8	W
PD @TC = 25°C	Power Dissipation	94	W
	Linear Derating Factor	0.63	W/°C
Vgs	Gate-to-Source Voltage	±20	V
Iar	Avalanche Current①	25	A
Ear	Repetitive Avalanche Energy®	9.4	mJ
dv/dt	Peak Diode Recovery dv/dt ③	5.0	V/ns
Tj	Operating Junction and	-55 to + 175	°C

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